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  1        " ! ! (400 volts peak) the moc3020 series consists of gallium arsenide infrared emitting diodes, optically coupled to a silicon bilateral switch. ? t o o r d e r d e v i c e s t h a t a r e t e s t e d a n d m a r k e d p e r v d e 0 8 8 4 r e q u i r e m e n t s , t h e s uf fix ovo must be included at end of part number . vde 0884 is a test option. they are designed for applications requiring isolated triac triggering. recommended for 115/240 vac(rms) applications: ? solenoid/valve controls ? static ac power switch ? lamp ballasts ? solid state relays ? interfacing microprocessors to 115 vac peripherals ? incandescent lamp dimmers ? motor controls maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit infrared emitting diode reverse voltage v r 3 volts forward current e continuous i f 60 ma total power dissipation @ t a = 25 c negligible power in triac driver derate above 25 c p d 100 1.33 mw mw/ c output driver offstate output terminal voltage v drm 400 volts peak repetitive surge current (pw = 1 ms, 120 pps) i tsm 1 a total power dissipation @ t a = 25 c derate above 25 c p d 300 4 mw mw/ c total device isolation surge voltage (1) (peak ac voltage, 60 hz, 1 second duration) v iso 7500 vac(pk) total power dissipation @ t a = 25 c derate above 25 c p d 330 4.4 mw mw/ c junction temperature range t j 40 to +100 c ambient operating t emperature rang e t a 40 to +85 c storage t emperature rang e t stg 40 to +150 c soldering temperature (10 s) t l 260 c 1. isolation surge voltage, v iso , is an internal device dielectric breakdown rating. 1. for this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common. www..net
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit input led reverse leakage current (v r = 3 v) i r e 0.05 100 m a forward voltage (i f = 10 ma) v f e 1.15 1.5 volts output detector (i f = 0 unless otherwise noted) peak blocking current, either direction (rated v drm (1) ) i drm e 10 100 na peak onstate voltage, either direction (i tm = 100 ma peak) v tm e 1.8 3 volts critical rate of rise of offstate voltage (figure 7, note 2) dv/dt e 10 e v/ m s coupled led t rigger current, current required to latch output (main terminal voltage = 3 v (3) ) moc3021 MOC3022 moc3023 i ft e e e 8 e e 15 10 5 ma holding current, either direction i h e 100 e m a 1. t est voltage must be applied within dv/dt rating. 2. this is static dv/dt. see figure 7 for test circuit. commutating dv/dt is a function of the loaddriving thyristor(s) only . 3. all devices are guaranteed to trigger at an i f value less than or equal to max i ft . therefore, recommended operating i f lies between max 3. i ft (15 ma for moc3021, 10 ma for MOC3022, 5 ma for moc3023) and absolute max i f (60 ma). 800 typical electrical characteristics t a = 25 c figure 1. led forward voltage versus forward current 2 1.8 1.6 1.4 1.2 1 1 10 100 1000 i f , led forward current (ma) v f , forward voltage (volts) 85 c 25 c figure 2. onstate characteristics 3 v tm , onstate voltage (volts) i 400 0 +400 +800 2 1 0 1 2 3 tm , on-state current (ma) t a = 40 c pulse only pulse or dc mo c 3 021 , mo c 3 0 2 2 , mo c3023 www..net
t a , ambient temperature ( c) 40 100 1 30 20 10 0 10 20 30 40 50 60 70 80 10 i drm , leakage current (na) 0.7 figure 3. trigger current versus temperature 40 t a , ambient temperature ( c) 0.8 1.1 1.3 1.4 20 0 20 40 60 80 ft i 0.6 100 5 1 pw in , led trigger width ( m s) 10 15 20 25 2 5 2010 50 0 100 ft i , normalized led trigger current normalized to: pw in  100 m s figure 4. led current required to trigger versus led pulse width 2 40 t a , ambient temperature ( c) 4 6 8 10 25 30 50 7060 80 0 10090 12 static dv/dt circuit in figure 7 figure 5. dv/dt versus temperature +400 vdc pulse input mercury wetted relay r test c test r = 10 k w x100 scope probe d.u.t. applied voltage waveform 252 v 0 volts  rc v max = 400 v dv  dt  0.63 v max  rc  252  rc 1. the mercury wetted relay provides a high speed repeated pulse to the d.u.t. 2. 100x scope probes are used, to allow high speeds and voltages. 3. the worstcase condition for static dv/dt is established by triggering the d.u.t . with a normal led input current, then removing the current. the variable r test allows the dv/dt to be gradually increased until the d.u.t . continues to trigger in response to the applied voltage pulse, even after the led current has been removed. the dv/dt is then decreased until the d.u.t. stops triggering.  rc is measured at this point and recorded. , trigger current normalized 0.9 1 1.2 m dv/dt, static (v/ s) figure 6. leakage current, i drm versus temperature figure 7. static dv/dt test circuit mo c 3 021 , mo c 3 0 2 2 , mo c3023 www..net
r in 1 2 6 4 360 moc 3021/ 3022/ 3023 470 0.05 m f figure 8. typical application circuit 3 5 0.01 m f 39 hot 240 vac ground load v cc * this optoisolator should not be used to drive a load directly . it is in - tended to be a trigger device only. in this circuit the ahoto side of the line is switched and the load connected to the cold or ground side. the 39 ohm resistor and 0.01 m f capacitor are for snub- bing of the triac, and the 470 ohm resistor and 0.05 m f ca- pacitor are for snubbing the coupler . these components may or may not be necessary depending upon the particu - lar triac and load used. additional i nformatio n o n t h e u s e o f o pticall y c ouple d t riac drivers is available in application note an780a. mo c 3 021 , mo c 3 0 2 2 , mo c3023 www..net
package dimensions thru hole notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension l to center of lead when formed parallel. 6 4 1 3 a b seating plane t 4 pl f k c n g 6 pl d 6 pl e m a m 0.13 (0.005) b m t l m 6 pl j m b m 0.13 (0.005) a m t dim min max min max millimetersinches a 0.320 0.350 8.13 8.89 b 0.240 0.260 6.10 6.60 c 0.115 0.200 2.93 5.08 d 0.016 0.020 0.41 0.50 e 0.040 0.070 1.02 1.77 f 0.010 0.014 0.25 0.36 g 0.100 bsc 2.54 bsc j 0.008 0.012 0.21 0.30 k 0.100 0.150 2.54 3.81 l 0.300 bsc 7.62 bsc m 0 15 0 15 n 0.015 0.100 0.38 2.54     style 6: pin 1. anode 2. cathode 3. nc 4. main terminal 5. substrate 6. main terminal s urface mount a b  seating plane t j k l 6 pl m b m 0.13 (0.005) a m t c d 6 pl m a m 0.13 (0.005) b m t h g e 6 pl f 4 pl 31 46 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimetersinches a 0.320 0.350 8.13 8.89 b 0.240 0.260 6.10 6.60 c 0.115 0.200 2.93 5.08 d 0.016 0.020 0.41 0.50 e 0.040 0.070 1.02 1.77 f 0.010 0.014 0.25 0.36 g 0.100 bsc 2.54 bsc h 0.020 0.025 0.51 0.63 j 0.008 0.012 0.20 0.30 k 0.006 0.035 0.16 0.88 l 0.320 bsc 8.13 bsc s 0.332 0.390 8.43 9.90 mo c 3 021 , mo c 3 0 2 2 , mo c3023 www..net
notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension l to center of lead when formed parallel. 0. 4 " l ea d sp ac in g 6 4 1 3 a b n c k g f 4 pl seating d 6 pl e 6 pl plane t m a m 0.13 (0.005) b m t l j dim min max min max millimetersinches a 0.320 0.350 8.13 8.89 b 0.240 0.260 6.10 6.60 c 0.115 0.200 2.93 5.08 d 0.016 0.020 0.41 0.50 e 0.040 0.070 1.02 1.77 f 0.010 0.014 0.25 0.36 g 0.100 bsc 2.54 bsc j 0.008 0.012 0.21 0.30 k 0.100 0.150 2.54 3.81 l 0.400 0.425 10.16 10.80 n 0.015 0.040 0.38 1.02 mo c 3 021 , mo c 3 0 2 2 , mo c3 0 23 www..net
life support policy fairchilds products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. www.fairchildsemi.com ? 2000 fairchild semiconductor corporation www..net


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